Integration of a 90nm RF CMOS technology (200GHz f max - 150GHz f TNMOS) demonstrated on a 5GHz LNA

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 100-101

  Jeamsaksiri, W ^a   Mercha, A ^a   Ramos, J ^a   Linten, D ^b   Thijs, S ^a   Jenei, S ^a   Detcheverry, C ^c   Wambacq, P ^a   Velghe, R ^c   Decoutere, S ^a  

^a IMEC   (Belgium)

^b VRIJE UNIVERSITEIT BRUSSEL   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAIN FREQUENCY; GATE RESISTANCE; NOISE AMPLIFIER; TRANSITION FREQUENCY;

ACOUSTIC NOISE; AMPLIFIERS (ELECTRONIC); CAPACITORS; ELECTRIC INDUCTORS; ELECTRIC POTENTIAL; FREQUENCIES; GATES (TRANSISTOR); MICROPROCESSOR CHIPS; OSCILLATIONS; TRANSISTORS;

CMOS INTEGRATED CIRCUITS;

EID: 4544303654     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. P.H Woerlee et al, IEEE Trans.Electron. Dev., 48,1776-782,2001.
2. V.C. Venezia et al, ESSDERC 2002,p491-494
3. ITRS Roadmap http://public.itrs.net.
4. MM11: www.semiconductor.philips.com/philips_models
5. E. Morifuji et al., VLSI 1999, 163-164.
6. L.F.Tiemeijer et.al, IEDM 2001, 10.4.1-10.4.4