Current status and future trends of SiGe BiCMOS technology

IEEE Transactions on Electron Devices

Volumn 48, Issue 11, 2001, Pages 2575-2594

  Harame, D L ^a   Ahlgren, D C ^a   Coolbaugh, D D ^a   Dunn, J S ^a   Freeman, G G ^a   Gillis, J D ^a   Groves, R A ^a   Hendersen, G N ^a   Johnson, R A ^a   Joseph, A J ^a   Subbanna, S ^a   Victor, A M ^a   Watson, K M ^a   Webster, C S ^a   Zampardi, P J ^a  

^a IBM   (United States)

Author keywords

BiCMOS; HBT; SiGe

Indexed keywords

CAPACITANCE; CAPACITORS; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; ELECTRIC INDUCTORS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; VLSI CIRCUITS;

METAL INSULATOR METAL CAPACITORS; POLYSILICON INSULATOR POLYSILICON CAPACITORS; POLYSILICON INSULATOR SILICON CAPACITORS; SILICON GERMANIUM BISMUTH CMOS TECHNOLOGY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 6644223174     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.960385     Document Type: Article

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