Characterization and comparison of two metal-insulator-metal capacitor schemes in 0.13 μm copper dual damascene metallization process for mixed-mode and RF applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 241-244

  Ng, C H ^a   Chew, K W ^a   Li, J X ^a   Tjoa, T T ^a   Goh, L N ^a   Chu, S F ^a  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; ELECTRODES; METALLIZING; SILICON NITRIDE;

MIM CAPACITORS;

MIM DEVICES;

EID: 0036932191     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. M. Armacost, A. Augustin, P. Felsner, Y. Feng, G. Friese, and J. Heidenreich et al., "A high reliability metal insulator metal capacitor for 0.18μm copper technology," in IEDM Tech. Dig., 2000, pp. 157-160.
2. R.-C. Liu, C.-Y. Lin, E. Harris, S. Merchant, S.W. Downey, and G. Weber et al., "Single mask metal-insulator-metal (MIM) capacitor with copper damascene metallization for sub-018μm mixed mode signal and system-on-a-chip (SoC) applications," in IITC Proceedings, 2000, pp. 111-113.
3. R. Mahnkopf, K.-H. Allers, M. Armacost, A. Augustin, J. Barth, and G. Brase et al., '"System on a chip' technology platform for 0.18μm digital, mixed signal and eDRAM applications", in IEDM Tech. Dig., 1999, pp. 849-852.
4. P. Zurcher, P. Alluri, P. Chu, A. Duvallet, C. Happ, and R. Henderson et al., "Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies," in IEDM Tech. Dig., 2000, pp. 157-160.
5. C.H. Ng, and S.F. Chu, "Effect of the nitrous oxide plasma treatment on the MIM capacitor," IEEE Electron Device Lett., vol 23, pp. 529-531, Sept. 2002.
6. C.C. Lin, H.M. Hsu, Y.H. Chen, T. Shih, S.M. Jang, and C.H. Yu et al., "A full Cu damascene metallization process for sub-018μm RF CMOS SoC high Q inductor and MIM capacitor application at 2.4 GHz and 5.3 GHz," in IITC Proceedings, 2001, pp. 113-115.