A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC power amplifier module

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2002, Pages 245-248

  Yamamoto, K ^a   Asada, T ^a   Suzuki, S ^a   Miura, T ^a   Inoue, A ^a   Miyakuni, S ^a   Otsuji, J ^a   Hattori, R ^a   Miyazaki, Y ^a   Shimura, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTOR DIODES; SEMICONDUCTOR SWITCHES; SPURIOUS SIGNAL NOISE;

DIODE SWITCHES;

POWER AMPLIFIERS;

EID: 0036313026     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. A 3.5W HBT MMIC power amplifier module for mobile communications
2. A 3.6V 4W 0.2cc Si power-MOS-amplifier module for GSM handset phones
3. An E-mode GaAs FET power amplifier MMIC for GSM phones
4. A 900MHz HBT power amplifier MMICs with 55% efficiency, at 3.3 V operation
5. A high efficiency single chain GaAs MESFET MMIC dual band power amplifier for GSM/DCS handsets
6. An integrated 900-MHz push-pull power amplifier for mobile applications
7. A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit
8. A 3V small chip size GSM HBT power MMIC with 56% PAE
9. A GSM/EDGE error vector magnitude estimation platform for RFIC/ASIC evaluation
10. A new dual-mode GSM/EDGE transceiver using modulation loop
11. High efficiency AlGaAs/GaAs power HBTs at a low supply voltage for digital cellular phones