A 90 nm communication technology featuring SiGe HBT transistors, RF CMOS, precision R-L-C RF elements and 1 um2 6-T SRAM cell

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 73-76

  Kuhn, K ^a   Agostinelli, M ^a   Ahmed, S ^a   Chambers, S ^a   Cea, S ^a   Christensen, S ^a   Fischer, P ^a   Gong, J ^a   Kardas, C ^a   Letson, T ^a   Henning, L ^a   Murthy, A ^a   Muthali, H ^a   Obradovic, B ^a   Packan, P ^a   Pae, S W ^a   Post, I ^a   Putna, S ^a   Raol, K ^a   Roskowski, A ^a   Soman, R ^a   Thomas, T ^a   Vandervoorn, P ^a   Weiss, M ^a   Young, I ^a   more..

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; STATIC RANDOM ACCESS STORAGE;

PRECISION RESISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036931218     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. S. Thompson, et al. to be presented IEDM, December 2002.
2. D. Harame, et al. IEEE BTCM 2.1, pp. 36-43.
3. H.J. Osten, et al. IEDM 97-803, pp. 32.4.1-32.4.4
4. H. Rucker, et al. IEDM 99-345, pp. 14.4.1-14.4.4
5. R. K. Ulrich, et al. IEEE Circuits and Devices, Sept. 2000, pp. 17-25.
6. L. F. Tiemeijer, et. al. IEDM Technical Digest International, 2001, pp.10.4.1-10.4.4.