Delaying forever: Uniaxial strained silicon transistors in a 90nm CMOS technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 50-51

  Mistry, K ^a   Armstrong, M ^a   Auth, C ^a   Cea, S ^a   Coan, T ^a   Ghani, T ^a   Hoffmann, T ^a   Murthy, A ^a   Sandford, J ^a   Shaheed, R ^a   Zawadzki, K ^a   Zhang, K ^a   Thompson, S ^a   Bohra, M ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; MATHEMATICAL MODELS; MOSFET DEVICES; OSCILLATORS (ELECTRONIC); SENSITIVITY ANALYSIS; SILICON; SURFACE ROUGHNESS;

BIAXIAL COMPRESSION; HETEROEPITAXY; STRAINED SILICON TRANSISTORS; TENSILE STRAINS;

TRANSISTORS;

EID: 4544357717     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.2004.1345387     Document Type: Conference Paper

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