RF and AMS

IEEE Circuits and Devices Magazine

Volumn 20, Issue 6, 2004, Pages 38-51

  Bennett, Herbert S ^a   Brederlow, Ralf ^b   Costa, Julio ^c   Huang, Margaret ^d   Immorlica Jr , Anthony A ^e   Mueller, Jan Erik ^b   Racanelli, Marco ^f   Weitzel, Charles E ^d   Zhao, Bin ^g  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c RF MICRO DEVICES   (United States)

^d FREESCALE SEMICONDUCTOR INC   (United States)

^e BAE SYSTEMS   (United States)

^f Jazz Semiconductor   (United States)

^g SKYWORKS SOLUTIONS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSCEIVERS; VLSI CIRCUITS;

ANALOG AND MIXED SIGNAL INTEGRATED CIRCUITS; RADIO FREQUENCY INTEGRATED CIRCUITS; WIRELESS COMMUNICATION PRODUCTS;

WIRELESS TELECOMMUNICATION SYSTEMS;

EID: 10644256594     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/MCD.2004.1364774     Document Type: Article

References (11)

1. A.M. Leibovitch, Worldwide Mobile Phone Semiconductor 2004-2008 Forecast and Analysis, Document #30843, IDC, Mar. 2004. Available: http://www.idc.com
2. 3 International Technology Roadmap for Semiconductors, International SEMATECH, Austin, TX [Online]. Available: http://public.itrs.net/Files/ 2003ITRS/Home2003.htm
3. G.E. Moore, "Cramming more components onto integrated circuits," Electronics, vol. 38, no. 8, Apr. 19, 1965 [Online]. Available: http:/ /download.intel.com/research/silicon /noorespaper.pdf
4. R. Jaeger, J.A. Del Alamo, M. Fukuta, H.S. Bennett, and C.M. Snowden, "Special section on compound semiconductor microelectronics manufacturing: The future is here," IEEE Trans. Semiconduct. Manufact., vol. 16, pp. 354-356, Aug. 2003.
5. R. Brederlow, W. Weber, S. Donnay, P. Wambaq, J. Sauerer, and M. Vertregt, "A mixed-signal design roadmap," IEEE Des. Test Comput. vol. 18, pp. 34-46, Nov./Dec. 2001.
6. 2) dielectric and elevated source/ drain extensions," in 2003 Int. Electron Devices Meeting Tech. Dig. Washington, DC, pp. 11.5.1-11.5.3.
7. M. Feng, S.-C. Shen, D.C. Caruth, and J.-J. Huang, "Device technologies for RF front-end circuits in next-generation wireless communications," Proc. IEEE, vol. 92, pp. 354-372, Feb. 2004.
8. F. Ali and A. Gupta, Eds., HEMTs & HBTs: Devices, Fabrication and Circuits. Norwood, MA: Artech House, Inc., 1991.
9. J.S. Yuan, SiGe, GaAs and InP Heterojunction Bipolar Transistors. New York: Wiley, 1999.
10. C.A. Bozada, D.W. Barlage, J.P. Barrett, R.W. Dettmer, M.P. Mack, J.S. Sewell, G.C. Via, L.W. Yang, D.R. Helms, and J.J. Komiak, "Microwave power heterojunction bipolar transistors fabricated with thermal shunt and bathub," in Gallium Arsenide Integrated Circuit (GaAs IC) Symp. Tech. Dig., 1995, pp. 155-158.
11. J.A. Hutchby, G.I. Bourianoff, V.V. Zhironv, and J.E. Brewer, "Extending the Road Beyond CMOS," IEEE Circuits Devices Mag., vol. 18, pp. 28-41, Mar. 2002.