A 230-Watt 5-band SiGe heterojunction bipolar transistor

IEEE Transactions on Microwave Theory and Techniques

Volumn 44, Issue 12 PART 2, 1996, Pages 2392-2397

  Potyraj, Paul A ^a   Petrosky, Kenneth J ^a   Hobart, Karl D ^a   Kub, Francis J ^a   Thompson, Phillip E ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; FREQUENCY MODULATION; FREQUENCY RESPONSE; GAIN MEASUREMENT; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

COLLECTOR EFFICIENCY; COLLECTOR TRANSIT DELAY TIME;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030399112     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.554567     Document Type: Article

References (7)

1. T. Shimura et al, "l W Ku-band AlGaAs/GaAs power HBT's with 72% peak power-added efficiency," IEEE Trans. Electron Devices, vol. 42, no. 11, p. 1890, 1995.
2. A. Schuppen et al, "Enhanced SiGe heterojunction bipolar transistor process with 160 GHz /max/' in IEEE Int. Electron Devices Meet. Tech. Dig., 1995, p. 743.
3. K.D. Hobart et al, "Si/Sii_a;Gex heterojunction bipolar transistors with high breakdown voltage," Electron Device Lett., vol. 16, no. 5, p. 205, 1995.
4. P.A. Potyraj et al, "A 230 Watt S-Band SiGe HBT,"'in IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, 1996, p. 673
5. J.W. Matthews et al, J. Cryst. Growth, vol. 27, p. 118, 1974.
6. D.L. Harame et al, "Optimization of SiGe HBT technology for high speed analog and mixed-signal applications," in IEEE Int. Electron Devices Meet. Technical Dig., p. 71, 1993.
7. P.E. Thompson et al, J. Vac. Sei. Technol B, Micro-electron Process. Phenom., vol. 11, p. 1077, 1993.