High performance single supply power amplifiers for GSM and DCS applications using true enhancement mode FET technology

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2002, Pages 447-450

  Glass, Elizabeth ^a   Shields, Michael ^a   Reyes, Adolfo ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATTENUATION; ELECTRIC ATTENUATORS; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; HETEROJUNCTION BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; MOS DEVICES; POWER INTEGRATED CIRCUITS; SURFACE MOUNT TECHNOLOGY; THRESHOLD VOLTAGE;

ON CHIP ATTENUATORS;

POWER AMPLIFIERS;

EID: 0036309536     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. E-PHEMT, single supply, high efficient power amplifiers for GSM and DCS applications
2. A single supply high perfomance PA MMIC for GSM handsets using quasienhancement mode PHEMT
3. Application of enhancement mode FET technology for wireless subscriber transmit/receive circuits
4. A single supply device technology for wireless applications
5. A true enhancement mode device technology suitable for dual mode dual band power amplifier applications