A low-voltage multi-GHz VCO with 58% tuning range in SOI CMOS

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2002, Pages 423-426

  Fong, Neric ^a   Plouchart, Jean Olivier ^b   Zamdmer, Noah ^c   Liu, Duixian ^b   Wagner, Lawrence ^c   Plett, Calvin ^a   Tarr, Garry ^a  

^a CARLETON UNIVERSITY   (Canada)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; ELECTRIC INDUCTORS; ELECTRIC NETWORK TOPOLOGY; GAIN CONTROL; POWER CONTROL; SILICON ON INSULATOR TECHNOLOGY; SPECTRUM ANALYZERS; SPURIOUS SIGNAL NOISE; SWITCHING CIRCUITS; TUNING; VARACTORS;

ACCUMULATION METAL OXIDE SEMICONDUCTOR (AMOS) VARACTORS; SINGLE-LOOP INDUCTORS;

VARIABLE FREQUENCY OSCILLATORS;

EID: 0036049570     PISSN: 08865930     EISSN: None     Source Type: Journal    
DOI: 10.1109/CICC.2002.1012862     Document Type: Article

References (7)

1. A 0.13-μm SOI CMOS technology for low-power digital and RF applications
2. A comparison of MOS varactors in fully-integrated CMOS LC VCO's at 5 and 7 GHz
3. A-94dBc/Hz@100kHz, fully-integrated, 5G Hz, CMOS VCO with 18% tuning range for Bluetooth application
4. A 1 mA,-120.5 dbc/Hz at 600 kHz from 1.9 GHz fully tuneable LC CMOS VCO
5. Wideband BiCMOS VCO for GSM/UMTS direct conversion receivers
6. A 4.3-GHz VCO with 2-GHz tuning range and low phase noise