Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz

IEEE Transactions on Electron Devices

Volumn 46, Issue 11, 1999, Pages 2217-2227

  Jen, Steve Hung Min ^a,b,c   Enz, Christian C ^a,b   Pehlke, David R ^a,b,c   Schröter, Michael ^b,c   Sheu, Bing J ^a,b,c  

^a IC Media Corporation   (United States)

^b Rockwell Semiconductor Systems   (United States)

^c ROCKWELL SCIENCE CENTER   (United States)

Author keywords

CMOS; De embed, modeling; Parameter extraction; Parameter measurement; RF; Small signal equivalent circuit

Indexed keywords

APPROXIMATION THEORY; CMOS INTEGRATED CIRCUITS; COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; ELECTRIC NETWORK SYNTHESIS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; FEATURE EXTRACTION; MATHEMATICAL MODELS; SUBSTRATES;

PARAMETER EXTRACTION; QUASI-STATIC APPROXIMATION; SMALL SIGNAL EQUIVALENT CIRCUITS;

MOSFET DEVICES;

EID: 0033221855     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.796299     Document Type: Article

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