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Volumn 84, Issue 23, 2011, Pages

Charge transition levels of carbon-, oxygen-, and hydrogen-related defects at the SiC/SiO 2 interface through hybrid functionals

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84855408864     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.235320     Document Type: Article
Times cited : (101)

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