Aggregation of carbon interstitials in silicon carbide: A theoretical study

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 12, 2003, Pages

  Gali, A ^a   Deak P ^a   Ordejon P ^b   Son, T ^c   Janzen E ^c   Choyke, J ^d  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c LINKÖPING UNIVERSITY   (Sweden)

^d UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; SILICON CARBIDE;

ARTICLE; COMPLEX FORMATION; CORRELATION ANALYSIS; ELECTRONICS; ENERGY; MATHEMATICAL ANALYSIS; MOLECULAR DYNAMICS; THEORY; VIBRATION;

EID: 0242657501     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.125201     Document Type: Article

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