Improved 4H-SiC MOS interfaces produced via two independent processes: Metal enhanced oxidation and 1300°C NO anneal

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 967-970

  Das, Mrinal K ^a   Hull, Brett A ^a   Krishnaswami, Sumi ^a   Husna, Fatima ^a   Haney, Sarah ^a   Lelis, Aivars ^b   Scozzie, Charles J ^b   Scofield, James D ^c  

^a Arkansas Power Electronics International Inc   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Channel mobility; Interface states; MEO; MOS; MOSFETs; Nitridation; Oxidation

Indexed keywords

ALUMINA; ELECTROOXIDATION; HIGH TEMPERATURE OPERATIONS; IMPURITIES; INTERFACES (MATERIALS); NITRIDATION;

CHANNEL MOBILITY; INTERFACE STATES; METAL ENHANCED OXIDATION; METALLIC IMPURITIES;

MOSFET DEVICES;

EID: 36049011628     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.967     Document Type: Conference Paper

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