Identification of the Carbon Dangling Bond Center at the 4H-SiC/SiO 2 Interface by an EPR Study in Oxidized Porous SiC

Physical Review Letters

Volumn 92, Issue 1, 2004, Pages 155021-155024

  Cantin, J L ^a   Von Bardeleben, H J ^a   Shishkin, Y ^b   Ke, Y ^b   Devaty, R P ^b   Choyke, W J ^b  

^a SORBONNE UNIVERSITÉ   (France)

^b UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL BONDS; DEFECTS; DIFFUSION; FERMI LEVEL; HYDROGEN; INTERFACES (MATERIALS); OXIDATION; PARAMAGNETISM; PASSIVATION; POROSITY; SEMICONDUCTOR DOPING; SILICON CARBIDE;

BOND CENTERS; INTERFACE DEFECTS;

SILICA;

EID: 4344600255     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (20)

1. A. Pasquarello, M. S. Hybertson, and R. Car, Nature (London) 396, 58 (1998).
2. Y. Tu and J. Tersoff, Phys. Rev. Lett. 89, 86102 (2002).
3. M. Di Ventra and S. T. Pantelides, Phys. Rev. Lett. 83, 1624 (1999).
4. S. Wang, M. DiVentra, S. G. Kim, and S. T. Pantelides, Phys. Rev. Lett. 86, 5946 (2001).
5. F. Amy, H. Enriquez, P. Soukiassian, P. F. Storino,Y. J. Chabal, A. J. Mayne, G. Dujardin, Y. K. Hwu, and C. Brylinski, Phys. Rev. Lett. 86, 4342 (2001).
6. H. Kobayashi, T. Sakurai, M. Takahashi, and Y. Nishioka, Phys. Rev. B 67, 115305 (2003).
7. I. Vickridge, I. Trimaille, J. J. Ganem, S. Rigo, C. Radtke, I. R. Baumvol, and F. C. Stedile, Phys. Rev. Lett. 89, 256102 (2002).
8. J. Dekker, K. Saarinen, H. O. Olafsson, and E. O. Sveinbjornson, Mater. Sci. Forum 433-436, 543 (2003).
9. N. S. Saks, S. S. Mani, and A. K. Agarwal, Appl. Phys. Lett. 76, 2250 (2000).
10. K. Fukuda, W. J. Cho, K. Arai, S. Suzuki, J. Senzaki, and T. Tanaka, Appl. Phys. Lett. 77, 866 (2000).
11. E. H. Poindexter, P. J. Caplan, B. E. Deal, and R. R. Razouk, J. Appl. Phys. 52, 879 (1981).
12. A. Stirling, A. Pasquarello, and J. C. Charlier, Phys. Rev. Lett. 85, 2773 (2000).
13. P. J. Macfarlane and M. E. Zvanut, J. Appl. Phys. 88, 4122 (2000).
14. Y. Shishkin, W. J. Choyke, and R. P. Devaty, Proceedings of the ICSCRM Conference, Lyon, 2003 [Mater. Sci. Forum (to be published)].
15. J. L. Cantin, M. Schoisswohl, H. J. von Bardeleben, N. Hadj Zoubir, and M. Vergnat, Phys. Rev. B 52, R11 599 (1995).
16. V. Ya Bratus', S. S. Ishchenko, S. M. Okulov, I. P. Vorona, H. J. von Bardeleben, and M. Schoisswohl, Phys. Rev. B 50, 15449 (1994).
17. J. Bourgoin and M. Lannoo, Point Defects in Semiconductors II, Springer Series in Solid State Sciences Vol. 35 (Springer Verlag, Berlin, 1981), p. 77.
18. J. R. Morton and K. F. Preston, J. Magn. Reson. 30, 577 (1978).
19. M. A. Jupina and P. M. Lenahan, IEEE Trans. Nucl. Sci. 37, 1650 (1990).
20. A. Ekoué, O. Renault, T. Billon, L. DiCioccio, and G. Guillot, Mater. Sci. Forum 433-436, 555 (2003).