Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties

Applied Physics Letters

Volumn 99, Issue 2, 2011, Pages

  Watanabe, Heiji ^a   Hosoi, Takuji ^a   Kirino, Takashi ^a   Kagei, Yusuke ^a   Uenishi, Yusuke ^a   Chanthaphan, Atthawut ^a   Yoshigoe, Akitaka ^b   Teraoka, Yuden ^b   Shimura, Takayoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE ROUGHNESS; CORE-LEVEL SPECTRA; ELECTRICAL CHARACTERIZATION; ELECTRICAL DEGRADATION; ELECTRICAL MEASUREMENT; INTERFACE DEFECTS; NEGATIVE FIXED CHARGE; OXIDE INTERFACES; SIC SUBSTRATES; STRUCTURAL CHANGE; SYNCHROTRON X-RAY PHOTOELECTRON SPECTROSCOPIES; THERMAL OXIDATION;

ATOMIC SPECTROSCOPY; CRYSTAL ATOMIC STRUCTURE; DIELECTRIC DEVICES; MOS CAPACITORS; PHOTOELECTRICITY; PHOTONS; REACTION INTERMEDIATES; SILICON CARBIDE; SYNCHROTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTOELECTRON SPECTROSCOPY;

EID: 79960503955     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3610487     Document Type: Article

References (16)

1. A. Agarwal, S.-H. Ryu, J. Palmour, W. J. Choyke, H. Matsunami, and G. Pensl, in Silicon Carbide: Recent Major Advances, edited by, W. J. Choyke, (Springer, Berlin, 2004).
2. J. M. Gibson and M. Y. Lanzerotti, Nature 340, 128 (1989). 10.1038/340128a0
3. F. M. Ross and J. M. Gibson, Phys. Rev. Lett. 68, 1782 (1992). 10.1103/PhysRevLett.68.1782
4. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, and J. A. Yarmoff, Phys. Rev. B 38, 6084 (1988). 10.1103/PhysRevB.38.6084
5. K. Ohishi and T. Hattori, Jpn. J. Appl. Phys. 33, L675 (1994). 10.1143/JJAP.33.L675
6. H. Watanabe, K. Kato, T. Uda, K. Fujita, M. Ichikawa, T. Kawamura, and K. Terakura, Phys. Rev. Lett. 80, 345 (1998). 10.1103/PhysRevLett.80.345
7. K. C. Chang, N. T. Nuhfer, L. M. Porter, and Q. Wahab, Appl. Phys. Lett. 77, 2186 (2000). 10.1063/1.1314293
8. T. Zheleva, A. Lelis, G. Duscher, F. Liu, I. Levin, and M. Das, Appl. Phys. Lett. 93, 022108 (2008). 10.1063/1.2949081
9. T. L. Biggerstaff, C. L. Reynolds, Jr., T. Zheleva, A. Lelis, D. Habersat, S. Haney, S.-H. Ryu, A. Agarwal, and G. Duscher, Appl. Phys. Lett. 95, 032108 (2009). 10.1063/1.3144272
10. X. Zhu, H. D. Lee, T. Feng, A. C. Ahyi, D. Mastrogiovanni, A. Wan, E. Garfunkel, J. R. Williams, T. Gustafsson, and L. C. Feldman, Appl. Phys. Lett. 97, 071908 (2010). 10.1063/1.3481672
11. C. Radtke, I. J. R. Baumvol, J. Morais, and F. C. Stedile, Appl. Phys. Lett. 78, 3601 (2001). 10.1063/1.1374518
12. C. Virojanadara and L. I. Johansson, Phys. Rev. B 71, 195335 (2005). 10.1103/PhysRevB.71.195335 (Pubitemid 43285217)
13. Y. Teraoka and A. Yoshigoe, Appl. Surf. Sci. 169-170, 738 (2001). 10.1016/S0169-4332(00)00779-0 (Pubitemid 32195675)
14. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
15. H. Watanabe, H. Ohmi, H. Kakiuchi, T. Hosoi, T. Shimura, and K. Yasutake, J. Nanosci. Nanotechnol. 11, 2802 (2011). 10.1166/jnn.2011.3911
16. F. Devynck and A. Pasquarello, Physica B 401-402, 556 (2007). 10.1016/j.physb.2007.09.020 (Pubitemid 350102152)