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Volumn 70, Issue 19, 2004, Pages 1-15

Modeling of the structure and properties of oxygen vacancies in amorphous silica

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; SILICON; SILICON DIOXIDE;

EID: 12344301952     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.195203     Document Type: Article
Times cited : (101)

References (62)
  • 12
    • 0002026939 scopus 로고    scopus 로고
    • Kluwer Academic, Dordrecht, Chap. The natures of point defects in amorphois silicon dioxide, NATO Science Series, Series II: Mathematical and Physical Chemistry
    • 2 and Related Dielectrics: Science and Technology (Kluwer Academic, Dordrecht, 2000), Chap. The natures of point defects in amorphois silicon dioxide, pp. 117-160, NATO Science Series, Series II: Mathematical and Physical Chemistry.
    • (2000) 2 and Related Dielectrics: Science and Technology , pp. 117-160
    • Griscom, D.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.