Ultrashallow defect states at SiO2 4H-SiC interfaces

Applied Physics Letters

Volumn 92, Issue 10, 2008, Pages

  Dhar, S ^a,d   Chen, X D ^b   Mooney, P M ^b   Williams, J R ^c   Feldman, L C ^a,e  

^a VANDERBILT UNIVERSITY   (United States)

^b SIMON FRASER UNIVERSITY   (Canada)

^c AUBURN UNIVERSITY   (United States)

^d Arkansas Power Electronics International Inc   (United States)

^e RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CONDUCTION BANDS; ELECTRIC POTENTIAL; NITRIDATION;

INTERFACE STATE DENSITY; PEAK MAGNITUDE;

SEMICONDUCTOR MATERIALS;

EID: 40849088251     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2898502     Document Type: Article

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