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Volumn 505, Issue , 2002, Pages 358-366
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Oxidation studies of 4H-SiC(0 0 0 1) and (0 0 0 ī)
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Author keywords
Oxidation; Photoemission (total yield); Silicon carbide; Silicon oxides
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Indexed keywords
CRYSTALLINE MATERIALS;
ELECTRON ENERGY LEVELS;
OXIDATION;
PHOTOEMISSION;
SPECTRUM ANALYSIS;
OXIDATION STATES;
SILICON CARBIDE;
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EID: 0036569545
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(02)01154-8 Document Type: Article |
Times cited : (65)
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References (19)
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