Improved performance and reliability of N2O-grown oxynitride on 6H-SiC

IEEE Electron Device Letters

Volumn 21, Issue 6, 2000, Pages 298-300

  Xu, J P ^a   Lai, P T ^b   Chan, C L ^b   Li, B ^b   Cheng, Y C ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMOOXIDATION;

HOT CARRIER STRESS;

SILICON WAFERS;

EID: 0033729250     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.843156     Document Type: Article

References (12)

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