Electrical, structural, and chemical analysis of silicon carbide-based metal-oxide-semiconductor field-effect-transistors

Journal of Applied Physics

Volumn 95, Issue 12, 2004, Pages 8252-8257

  Chang, K C ^a   Porter, L M ^a   Bentley, J ^b   Lu, C Y ^c   Cooper Jr , J ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITIES; ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY (EFTEM); ENERGY FILTERS; THERMAL GROWTH;

ANNEALING; CARRIER MOBILITY; ELECTRON ENERGY LOSS SPECTROSCOPY; MORPHOLOGY; OXIDATION; POISSON EQUATION; POLYSILICON; SILICON CARBIDE; SINGLE CRYSTALS; STRUCTURE (COMPOSITION); SURFACE CHEMISTRY; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

MOSFET DEVICES;

EID: 3142705969     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1737801     Document Type: Article

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