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Volumn 472, Issue 1-2, 2001, Pages

Interfacial investigation of in situ oxidation of 4H-SiC

Author keywords

Oxidation; Semi conductor insulator interfaces; Silicon carbide; Silicon oxides

Indexed keywords


EID: 0000696886     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00967-5     Document Type: Article
Times cited : (65)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.