Identification of a major cause of endemically poor mobilities in SiC/ SiO2 structures

Applied Physics Letters

Volumn 98, Issue 5, 2011, Pages

  Shen, Xiao ^a   Pantelides, Sokrates T ^a,b  

^a VANDERBILT UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL EVIDENCE; INTERSTITIAL DEFECTS; MOBILITY DEGRADATION; POWER DEVICES; SEMICONDUCTOR SUBSTRATE; THEORETICAL RESULT; THERMAL OXIDATION;

ELECTRON MOBILITY; SILICON CARBIDE;

DEFECTS;

EID: 79951501927     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3553786     Document Type: Article

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