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Volumn 83, Issue 19, 2011, Pages

Defect levels of carbon-related defects at the SiC/SiO2 interface from hybrid functionals

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Indexed keywords


EID: 79961114574     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.195319     Document Type: Article
Times cited : (55)

References (30)
  • 2
    • 0031188454 scopus 로고    scopus 로고
    • PSSABA 0031-8965 10.1002/1521-396X(199707)162:1<321::AID-PSSA321>3. 0.CO;2-F
    • V. V. Afanasev, M. Bassler, G. Pensl, and M. J. Schulz, Phys. Status Solidi A PSSABA 0031-8965 10.1002/1521-396X(199707)162:1<321::AID- PSSA321>3.0.CO;2-F 162, 321 (1997).
    • (1997) Phys. Status Solidi A , vol.162 , pp. 321
    • Afanasev, V.V.1    Bassler, M.2    Pensl, G.3    Schulz, M.J.4
  • 5
    • 0000696886 scopus 로고    scopus 로고
    • Interfacial investigation of in situ oxidation of 4H-SiC
    • DOI 10.1016/S0039-6028(00)00967-5, PII S0039602800009675
    • C. Virojanadara and L. I. Johansson, Surf. Sci. Lett. SUSCAS 0039-6028 10.1016/S0039-6028(00)00967-5 472, L145 (2001). (Pubitemid 33646450)
    • (2001) Surface Science , vol.472 , Issue.1-2
    • Virojanadara, C.1    Johansson, L.I.2
  • 6
    • 0036569545 scopus 로고    scopus 로고
    • Oxidation studies of 4H-SiC(0 0 0 1) and (0 0 0 1)
    • DOI 10.1016/S0039-6028(02)01154-8, PII S0039602802011548
    • C. Virojanadara and L. I. Johansson, Surf. Sci. SUSCAS 0039-6028 10.1016/S0039-6028(02)01154-8 505, 358 (2002). (Pubitemid 34449239)
    • (2002) Surface Science , vol.505 , pp. 358-366
    • Virojanadara, C.1    Johansson, L.I.2
  • 18
    • 4243943295 scopus 로고    scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.77.3865
    • J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.77.3865 77, 3865 (1996).
    • (1996) Phys. Rev. Lett. , vol.77 , pp. 3865
    • Perdew, J.P.1    Burke, K.2    Ernzerhof, M.3
  • 19
    • 33645426115 scopus 로고
    • PLRBAQ 1098-0121 10.1103/PhysRevB.43.1993
    • N. Troullier and J. L. Martins, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.43.1993 43, 1993 (1991).
    • (1991) Phys. Rev. B , vol.43 , pp. 1993
    • Troullier, N.1    Martins, J.L.2
  • 21
  • 22
    • 77954823095 scopus 로고    scopus 로고
    • PLRBAQ 1098-0121 10.1103/PhysRevB.81.039903
    • P. Broqvist, A. Alkauskas, and A. Pasquarello, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.81.039903 81, 039903 (E) (2010).
    • (2010) Phys. Rev. B , vol.81 , pp. 039903
    • Broqvist, P.1    Alkauskas, A.2    Pasquarello, A.3
  • 23
    • 79961116583 scopus 로고    scopus 로고
    • cpmd v3.11.1, copyright IBM Corp 1990-2006, copyright MPI für Festkörperforschung Stuttgart 1997-2001;
    • cpmd v3.11.1, copyright IBM Corp 1990-2006, copyright MPI für Festkörperforschung Stuttgart 1997-2001;
  • 25
    • 0003858449 scopus 로고    scopus 로고
    • Yoon Soo Park, in edited by R. K. Willardson and E. R. Weber (Academic Press, San Diego
    • Yoon Soo Park, in SiC Materials and Devices, edited by, R. K. Willardson, and, E. R. Weber, (Academic Press, San Diego, 1998).
    • (1998) SiC Materials and Devices
  • 26
    • 34248995628 scopus 로고    scopus 로고
    • First principles investigation of defects at interfaces between silicon and amorphous high- oxides
    • DOI 10.1016/j.mee.2007.04.075, PII S0167931707004261, INFOS 2007
    • P. Broqvist and A. Pasquarello, Microelectron. Eng. MIENEF 0167-9317 10.1016/j.mee.2007.04.075 84, 2022 (2007). (Pubitemid 46783938)
    • (2007) Microelectronic Engineering , vol.84 , Issue.9-10 , pp. 2022-2027
    • Broqvist, P.1    Pasquarello, A.2
  • 29
    • 0001671054 scopus 로고
    • PLRBAQ 1098-0121 10.1103/PhysRevB.51.4014
    • G. Makov and M. C. Payne, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.51.4014 51, 4014 (1995).
    • (1995) Phys. Rev. B , vol.51 , pp. 4014
    • Makov, G.1    Payne, M.C.2
  • 30
    • 79961122969 scopus 로고    scopus 로고
    • To assess the convergence of the defect levels with the finite thickness of the SiC slab, calculations at the PBE level were carried out with the thickness of SiC doubled. The positions of the defect levels did not shift by more than 0.1 eV.
    • To assess the convergence of the defect levels with the finite thickness of the SiC slab, calculations at the PBE level were carried out with the thickness of SiC doubled. The positions of the defect levels did not shift by more than 0.1 eV.


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