Shallow electron traps at the 4H-SiC/SiO2 interface

Applied Physics Letters

Volumn 76, Issue 3, 2000, Pages 336-338

  Afanas'ev, V V ^a   Stesmans, A ^a   Bassler, M ^b   Pensl, G ^b   Schulz, M J ^b  

^a KU LEUVEN   (Belgium)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000810016     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125737     Document Type: Article

References (21)

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