Si/SiO2 and SiC/SiO2 interfaces for MOSFETs - Challenges and advances

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 935-948

  Pantelides, Sokrates T ^a,b   Wang, Sanwu ^a   Franceschetti, A ^a,b,f   Buczko, R ^a,b,g   Di Ventra, M ^a,h   Rashkeev, S N ^a,b   Tsetseris, L ^a   Evans, M H ^a   Batyrev, G ^a   Feldman, L C ^a,b   Dhar, S ^a   McDonald, K ^a,i   Weiler, R A ^c   Schrimpf, R D ^c   Fleetwood, D M ^c   Zhou, X J ^c   Williams, J R ^d   Tin, C C ^d   Chung, G Y ^d,j   Isaacs Smith, T ^d   Wang, S R ^d   Pennycook, S J ^a,b   Duscher, G ^a,b,k   Van Beninern, K ^b   Porter, L M ^e   more..

^a VANDERBILT UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d AUBURN UNIVERSITY   (United States)

^e CARNEGIE MELLON UNIVERSITY   (United States)

^f NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^g POLISH ACADEMY OF SCIENCES   (Poland)

^h UNIVERSITY OF CALIFORNIA   (United States)

ⁱ SANDIA NATIONAL LABORATORIES   (United States)

^j DOW CORNING CORPORATION   (United States)

^k North Carolina State University   (United States)

more..

Author keywords

Interface trap density; Mobilities; Passivation; Si SiO2; SiC SiO2

Indexed keywords

ELECTRON MOBILITY; ELECTRON TRAPS; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTING SILICON; SILICON CARBIDE; THERMAL CONDUCTIVITY;

ANNEALING IN HYDROGEN; ATOMIC-SCALE PROCESSES; INTERFACE DEFECTS; INTERFACE TRAP DENSITY;

MOSFET DEVICES;

EID: 33846387775     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.935     Document Type: Conference Paper

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