Graphitic features on SiC surface following oxidation and etching using surface enhanced Raman spectroscopy

Applied Physics Letters

Volumn 85, Issue 16, 2004, Pages 3495-3497

  Lu, Weijie ^a   Feldman, L C ^b   Song, Y ^b   Dhar, S ^b   Collins, W E ^a   Mitchel, W C ^c   Williams, J R ^d  

^a FISK UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON SPECIES; CHANNEL MOBILITY; ELECTRON PARAMAGNETIC RESONANCE (EPR); ONE-DIMENSIONAL POLYENES;

ATMOSPHERIC PRESSURE; ELECTRON ENERGY LEVELS; ETCHING; FIELD EFFECT TRANSISTORS; GRAPHITE; OXIDATION; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON CARBIDE;

EID: 9744245984     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1804610     Document Type: Article

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