A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 547-550

  Olafsson H O ^a   Sveinbjornsson E O ^a   Rudenko, T E ^b   Kilchytska, V I ^b   Tyagulski, I P ^b   Osiyuk, I N ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b INSTITUTE OF HYDROBIOLOGY   (Ukraine)

Author keywords

Interface States; MOS; Silicon Dioxide; Thermally Stimulated Currents

Indexed keywords

ANNEALING; BAND STRUCTURE; CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRIC FIELDS; INTERFACES (MATERIALS); MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; TEMPERATURE;

THERMALLY STIMULATED CURRENTS;

ELECTRON TRAPS;

EID: 0242413308     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (6)

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