Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen

Physical Review Letters

Volumn 98, Issue 2, 2007, Pages

  Wang, Sanwu ^a   Dhar, S ^b   Wang, Shu Rui ^c   Ahyi, A C ^c   Franceschetti, A ^d   Williams, J R ^c   Feldman, L C ^b,e   Pantelides, Sokrates T ^b,e  

^a UNIVERSITY OF TULSA   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c AUBURN UNIVERSITY   (United States)

^d NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^e OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; HYDROGEN; NITROGEN; PASSIVATION; SILICA; SILICON CARBIDE;

DEFECT DENSITY; NITRIDATION; RESIDUAL DEFECTS; SI-C-O BONDED INTERLAYERS;

INTERFACES (MATERIALS);

EID: 33846345840     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.98.026101     Document Type: Article

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