Nitrogen and hydrogen induced trap passivation at the SiO 2/4H-SiC interface

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 949-954

  Dhar, S ^a   Wang, S ^b   Ahyi, A C ^b   Isaacs Smith, T ^b   Pantelides, S T ^a   Williams, J R ^b   Feldman, L C ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

Author keywords

Crystal faces; Field effect mobility; Interface state density; Interface traps; Nitric oxide; Nitridation; Oxidation; Passivation; Post metallization annealing; Post oxidation annealing; SiO2 SiC interface

Indexed keywords

ELECTRON TRAPS; ELECTROOXIDATION; FIELD EFFECT SEMICONDUCTOR DEVICES; METALLIZING; NITRIC OXIDE; NITRIDATION; PASSIVATION; RAPID THERMAL ANNEALING; SILICA; SILICON CARBIDE;

CRYSTAL FACES; FIELD EFFECT MOBILITY; INTERFACE STATE DENSITY; INTERFACE TRAPS; POST-METALLIZATION ANNEALING; POST-OXIDATION ANNEALING;

INTERFACES (MATERIALS);

EID: 33846396088     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.949     Document Type: Conference Paper

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