Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC

Journal of Applied Physics

Volumn 103, Issue 3, 2008, Pages

  Chen, X D ^a   Dhar, S ^b   Isaacs Smith, T ^c   Williams, J R ^c   Feldman, L C ^b,d   Mooney, P M ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

^b VANDERBILT UNIVERSITY   (United States)

^c AUBURN UNIVERSITY   (United States)

^d RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON TRAPS; NITRIC OXIDE;

ELECTRON CAPTURE; INTERFACE STATES; STATE DENSITY; TRAP DISTRIBUTIONS;

SILICON CARBIDE;

EID: 39349112336     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2837028     Document Type: Article

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