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Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 535-538

A Cause for SiC/SiO2 Interface States: The Site Selection of Oxygen in SiC

(8) Deak P a Gali, A a Hajnal, Z b Frauenheim, Th b Son, N T c Janzen E c Choyke, W J d Ordejon P e

a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS (Hungary)

b UNIVERSITY OF PADERBORN (Germany)

c LINKÖPING UNIVERSITY (Sweden)

d UNIVERSITY OF PITTSBURGH (United States)

e INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC (Spain)

Author keywords

Interface States; SiO2; Theory

Indexed keywords

ENERGY GAP; INTERFACES (MATERIALS); OXIDATION; PROBABILITY DENSITY FUNCTION; SILICA;

GAP STATES;

SILICON CARBIDE;

EID: 0242413312 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: None Document Type: Conference Paper

Times cited : (12)

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