On shallow interface states in n type 4H-SiC metal-oxide-semiconductor structures

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1005-1008

  Olafsson H O ^a   Allerstam, F ^a   Sveinbjornsson E O ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Deep level transient spectroscopy; Interface states; MOS

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; METALS; MOLYBDENUM; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS; CAPACITANCE; ELECTRON MOBILITY; INTERFACES (MATERIALS); MOSFET DEVICES;

CONDUCTION BAND EDGE; CONSTANT CAPACITANCE; ELECTRON-CAPTURE CROSS SECTIONS; METAL OXIDE SEMICONDUCTOR STRUCTURE; SHALLOW TRAPS; SIC/SIO2-INTERFACES; ELECTRON CHANNEL MOBILITY;

INTERFACE STATES; MOS CAPACITORS;

EID: 18144442294     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1005     Document Type: Conference Paper

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