Observation of carbon clusters at the 4H-SiC/SiO2 interface

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 857-860

  Afanas'ev, V V ^a   Stesmans, A ^a   Harris, C I ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b ACREO AB   (Sweden)

Author keywords

Interface; Oxidation; Scanning Probe Microscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; CRYSTAL DEFECTS; ELECTRONIC DENSITY OF STATES; ETCHING; INCLUSIONS; INTERFACES (MATERIALS); PASSIVATION; SILICA; SILICON CARBIDE; THERMOOXIDATION;

HYDROGEN PASSIVATION; INTERFACIAL CARBON CLUSTERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 4244081114     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (11)

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