Improved oxidation procedures for reduced SiO2/SiC defects

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 909-915

  Lipkin, L A ^a   Palmour, J W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

Interface quality; Metal oxide semiconductor (MOS); Oxidation; SiC; SiO2

Indexed keywords

EID: 0001136342     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666657     Document Type: Article

References (19)

1. J.W. Palmour, J.A. Edmond, H.S. Kong and C.H. Carter, Jr., Amorphous and Crystalline Silicon Carbide IV, 71, eds. C.Y. Yang, M.M. Rahman, and G.L. Harris (Berlin: Springer-Verlag, 1992), p. 289.
2. S.M. Tang, W.B. Berry, R. Kwor, M.V. Zellerand L.G. Matus, J. Electrochem. Soc. 137 (1), 221 (1990).
3. S. Zaima, K. Onoda, Y. Koide and Y. Yasuda, J. Appl. Phys. 68 (12), 6304 (1990).
4. C.-M. Zetterling and M. Ostling, Diamond, SiC, and Nitride Wide Bandgap Semiconductors, 339, eds. C.H. Carter, Jr. G. Gildenblatt, S. Nakamura and R.J. Nemanich (Pittsburgh, PA: Materials Research Society, 1994), p. 209.
5. N. N. Singh and A. Rys, Silicon Carbide and Related Materials, 137, eds. M.G. Spencer, R.P. Devaty, J.A. Edmond, M.A. Khan, R. Kaplan and M. Rahman (Bristol: Inst. of Phys., 1994), p. 325.
6. D.M. Brown,M. Ghezzo,J. Kretchmer,E. Downey,J. Pimbley and J. W. Palmour, IEEE Trans on Electron Dev. 41 (4), 618 (1994).
7. T. Ouisse, N. Becourt, F. Templier and C. Jaussaud, J. Appl. Phys. 75 (1) (1994).
8. M. Shinohara, M. Yamanaka, S. Misawa, H. Okumura and S. Yoshida, Jpn. J. Appl. Phys. 30 (2), 240 (1991).
9. J.N. Shenoy, L.A. Lipkin, G.L. Chindalore, J. Pan, J.A. Cooper, Jr., J.W. Palmour and M.R. Melloch, Compound Semiconductors 1994, 141, eds. H. Goronkin and U. Mishra (Bristol: Inst. of Phys., 1994), p. 449.
10. D. Alok, P.K. McLarty and B.J. Baliga, J. Appl. Phys. 64 (21), 2845 (1994).
11. P. Neudeck, S. Kang, J. Petit and M. Tabib-Azar, J. Appl. Phys. 75 (12), 7949 (1994).
12. J.N. Shenoy, G.L. Chindalore, M.R. Melloch, J.A. Cooper, Jr., J.W. Palmour and K.G. Irvine J. Electonic Mater. 24 (4), 303 (1995).
13. E. Bano, T. Ouisse, L. Di Cioccio and S. Karmann,Appl. Phys. Lett. 65 (21), 2723 (1994).
14. C. Raynoud, J.-L. Autran, B. Balland, G. Guillot, C. Jaussaud and T. Billon, J. Appl. Phys. 76 (2), 993 (1994).
15. E.H. Nicollian and J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, (New York: Wiley Interscience, 1982).
16. B. Hornetz, H-J. Michel, J. Halbritter, J. Mater. Res. 9 (12), 3088 (1994).
17. J.W. Palmour, H.S. Kong, D.G. Waltz, J.A. Edmond and C.H. Carter, Jr., Proc. of 1st Intl. High Temperature Electronics Conf., eds. P.D. King and F. V. Thome (Albuquerque, NM: Sandia National Labs., 1991), p. 511.
18. D.M. Fleetwood, IEEE Trans. Nucl. Sci., NS-39 (12), 269 (1992).
19. A.G. Sabnis and J.T. Clemens, IEDM Tech. Dig. 18 (1979).