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Volumn 1199, Issue , 2009, Pages 108-109
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Energy levels of candidate defects at SiC/SiO2 interfaces
a a a a
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Author keywords
Band gap; Defects; SiC SiO2 interface
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Indexed keywords
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EID: 74849095908
PISSN: 0094243X
EISSN: 15517616
Source Type: Conference Proceeding
DOI: 10.1063/1.3295319 Document Type: Conference Paper |
Times cited : (15)
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References (4)
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