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Volumn 70, Issue 19, 2004, Pages 1-14

Multiscale modeling of oxygen diffusion through the oxide during silicon oxidation

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; SILICON DIOXIDE;

EID: 12344279831     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.195312     Document Type: Article
Times cited : (99)

References (92)
  • 53
    • 12344292075 scopus 로고    scopus 로고
    • Ph.D. thesis, Geneva
    • Andrea Trave, Ph.D. thesis, Geneva, 2001.
    • (2001)
    • Trave, A.1
  • 67
    • 0036799654 scopus 로고    scopus 로고
    • 2 as given by first-principles and by the classical potentials of Ref. 54, we refer the reader to M. Benoit and W. Kob, Europhys. Lett. 60, 269 (2002).
    • (2002) Europhys. Lett. , vol.60 , pp. 269
    • Benoit, M.1    Kob, W.2
  • 88
    • 0000983832 scopus 로고
    • L. Verdi, A. Miotello, and R. Kelly, Thin Solid Films 241, 383 (1994); L. Verdi and A. Miotello, Phys. Rev. B 51, 5469 (1995).
    • (1995) Phys. Rev. B , vol.51 , pp. 5469
    • Verdi, L.1    Miotello, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.