Significantly improved performance of MOSFET's on silicon carbide using the 15R-SiC polytype

IEEE Electron Device Letters

Volumn 20, Issue 5, 1999, Pages 241-244

  Schörner, Reinhold ^a   Friedrichs, P ^a   Peters, D ^a   Stephani, D ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ENERGY GAP; MOS CAPACITORS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

BAND GAPS; CAPACITANCE VOLTAGE MEASUREMENTS; CHANNEL MOBILITY;

MOSFET DEVICES;

EID: 0038642526     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.761027     Document Type: Article

References (17)

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