Interface states at SiO2/6H-SiC(0001) interfaces observed by x-ray photoelectron spectroscopy measurements under bias: Comparison between dry and wet oxidation

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 11, 2003, Pages 1153051-1153058

  Kobayashi, Hikaru ^a,b   Sakurai, Takeaki ^a,b,d   Takahashi, Masao ^a,b   Nishioka, Yasushiro ^c  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Texas Instruments Japan Ltd   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHITE; SILICON CARBIDE; SILICON DIOXIDE;

ANALYTIC METHOD; ARTICLE; COMPARATIVE STUDY; HEAT TREATMENT; MOLECULAR DYNAMICS; OXIDATION; SEMICONDUCTOR; TEMPERATURE DEPENDENCE; X IRRADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0037880479     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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