High channel mobility 4H-SiC MOSFETs

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 961-966

  Sveinbjomsson E O ^a   Gudjonsson, G ^a   Allerstam, F ^a   Olafsson H O ^a   Nilsson, P A ^a   Zirath, H ^a   Rodle, T ^b   Jos, R ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Field effect mobility; Interface states; SiC MOSFET

Indexed keywords

CARRIER MOBILITY; CONDUCTION BANDS; INTERFACES (MATERIALS); PHONON SCATTERING; SINTERED ALUMINA; THRESHOLD VOLTAGE;

FIELD EFFECT MOBILITY; GATE BIAS STRESSING; GATE OXIDE; INTERFACE STATES; INTERFACE TRAPS;

MOSFET DEVICES;

EID: 34548678367     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.527-529.961     Document Type: Conference Paper

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