Interfacial defects in SiO2 revealed by photon stimulated tunneling of electrons

Physical Review Letters

Volumn 78, Issue 12, 1997, Pages 2437-2440

  Afanas'ev V V ^a   Stesmans, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000853312     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.78.2437     Document Type: Article

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