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Volumn 82, Issue 13, 2003, Pages 2020-2022

Observation of interface defects in thermally oxidized SiC using positron annihilation

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CRYSTAL DEFECTS; INTERFACES (MATERIALS); POSITRON ANNIHILATION SPECTROSCOPY; THERMOOXIDATION;

EID: 0037475083     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1564637     Document Type: Article
Times cited : (27)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.