Defects in SiO2 as the possible origin of near interface traps in the SiC SiO2 system: A systematic theoretical study

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 11, 2005, Pages

  Knaup, J M ^a   Deak P ^a   Frauenheim, Th ^a   Gali, A ^b   Hajnal, Z ^c   Choyke, W J ^d  

^a UNIVERSITY OF PADERBORN   (Germany)

^b BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^d UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 29844450079     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.115323     Document Type: Article

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