Effects of nitridation and annealing on interface properties of thermally oxidized SiO2/SiC metal-oxide-semiconductor system

Applied Physics Letters

Volumn 76, Issue 25, 2000, Pages 3744-3746

  Lai, P T ^a   Chakraborty, Supratic ^a   Chan, C L ^a   Cheng, Y C ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000819907     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126769     Document Type: Article

References (4)

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3. S. Dimitrijev, H. F. Li, H. Barry Harrison, and D. Sweatman, IEEE Electron Device Lett. 18, 175 (1997).
4. D. K. Schroder, in Semiconductor Material and Device Characterization, 2nd ed. (Wiley, New York, 1998).