GaAs epitaxy on Si substrates: Modern status of research and engineering

Physics-Uspekhi

Volumn 51, Issue 5, 2008, Pages 437-456

  Bolkhovityanov, Yu B ^a   Pchelyakov, O P ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CRYSTAL GROWTH; ENGINEERING RESEARCH; EPITAXIAL GROWTH; GALLIUM; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; VANADIUM COMPOUNDS;

DEVICE-QUALITY; GAAS SUBSTRATES; III-V COMPOUNDS; SI SUBSTRATES;

GALLIUM ALLOYS;

EID: 51549109577     PISSN: 10637869     EISSN: None     Source Type: Journal    
DOI: 10.1070/PU2008v051n05ABEH006529     Document Type: Review

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