Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

Applied Physics Letters

Volumn 76, Issue 14, 2000, Pages 1884-1886

  Carlin, J A ^a   Ringel, S A ^a   Fitzgerald, E A ^b   Bulsara, M ^c   Keyes, B M ^d  

^a The Ohio State University   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c Amberwave Systems Corp   (United States)

^d NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000640786     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126200     Document Type: Article

References (19)

1. M. Yamaguchi, J. Mater. Res. 6, 376 (1991).
2. R. K. Ahrenkiel, M. M. Al-Jassim, B. Keyes, D. Dunlavy, K. M. Jones, S. M. Vernon, and T. M. Dixon, J. Electrochem. Soc. 137, 996 (1990).
3. R. Venkatasubramanian, M. L. Timmons, J. B. Posthill, B. M. Keyes, and R. K. Ahrenkiel, J. Cryst. Growth 107, 489 (1991).
4. A. Freundlich, M. Leroux, J. C. Grenet, A. Leycuras, G. Neu, and C. Verie, Proc. 8th Eur. Comm. Photovoltaic Solar Energy Conf. (1988), p. 1522.
5. T. Soga, M. Kawai, K. Otsuka, T. Jimbo, and M. Umeno, Proc. 2nd World Conf. on Photovoltaic Solar Energy Conversion (1998), p. 3733.
6. G. Wang, G. Y. Zhao, T. Soga, T. Jimbo, and M. Umeno, Jpn. J. Appl. Phys., Part 2 37, L1280 (1998).
7. M. T. Currie, S. B. Samavedam, T. A. Langdo, C. W. Leitz, and E. A. Fitzgerald, Appl. Phys. Lett. 72, 1718 (1998).
8. E. A. Fitzgerald and N. Chand, J. Electron. Mater. 20, 839 (1991).
9. R. M. Sieg, S. A. Ringel, S. M. Ting, E. A. Fitzgerald, and R. N. Sacks, J. Electron. Mater. 27, 900 (1998).
10. R. M. Sieg, S. A. Ringel, S. M. Ting, S. B. Samavedam, M. Currie, T. A. Langdo, and E. A. Fitzgerald, J. Vac. Sci. Technol. B 16, 1471 (1998).
11. R. M. Sieg, S. A. Ringel, S. M. Ting, and E. A. Fitzgerald, Proc. 26th IEEE Photovolt. Spec. Conf. (1997), p. 793.
12. R. M. Sieg, J. A. Carlin, J. J. Boeckl, S. A. Ringel, M. T. Currie, S. M. Ting, T. A. Langdo, G. Taraschi, E. A. Fitzgerald, and B. M. Keyes, Appl. Phys. Lett. 73, 3111 (1998).
13. M. Yamaguchi, C. Amano, Y. Itoh, K. Hane, R. K. Ahreniel, and M. M. Al-Jassim, Proc. 20th IEEE Photovoltaic Spec. Conf. (1988), p. 749.
14. G. B. Lush, M. R. Melloch, and M. S. Lundstrom, in Properties of GaAs, 3rd ed., edited by M. R. Brozel and G. E. Stillman (The Institution of Electrical Engineers, UK, 1996), pp. 135-143.
15. M. Yamaguchi and C. Amano, J. Appl. Phys. 58, 3601 (1985).
16. D. L. Miller and J. S. Harris, Appl. Phys. Lett. 37, 1104 (1980).
17. S. P. Tobin, S. M. Vernon, C. Bajgar, V. E. Haven, L. M. Geoffroy, and D. R. Lillington, IEEE Electron Device Lett. 9, 256 (1988).
18. N. Chand, J. Klem, T. Henderson, and H. Morkoc, J. Appl. Phys. 59, 3601 (1986).
19. Charles Evans and Associates (private communication).