Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers

Journal of Crystal Growth

Volumn 295, Issue 2, 2006, Pages 103-107

  Uen, Wu Yih ^a   Li, Zhen Yu ^a   Huang, Yen Chin ^a   Chen, Meng Chu ^c   Yang, Tsun Neng ^b   Lan, Shan Ming ^b   Wu, Chih Hung ^b   Hong, Hwe Fen ^b   Chi, Gou Chung ^c  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

A1. Characterization; A1. Etching; A3. Metal organic vapor phase epitaxy; B2. Semiconducting gallium arsenide; B3. Solar cells

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; SOLAR CELLS;

BUFFER STRUCTURES; ETCH-PIT DENSITY (EPD); FULL-WIDTH AT HALF-MAXIMUM (FWHM);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33745273823     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.07.026     Document Type: Article

References (22)

1. Noge H., Kano H., Kato T., Hashimoto M., and Igarashi I. J. Crystal Growth 83 (1987) 431
2. Pearton S.J., Abernathy C.R., Caruso R., Vernon S.M., Short K.T., Brown J.M., Chu S.N.G., Stavola M., and Haven V.E. J. Appl. Phys. 63 (1988) 775
3. Yamaguchi M., and Amano C. J. Appl. Phys. 58 (1985) 3601
4. Akiyama M., Kawarda Y., and Kaminishi K. Jpn J. Appl. Phys. 23 Part 2 (1984) L843
5. Campomanes R.R., Dias da Silva J.H., Vilcarromero J., and Cardoso L.P. J. Non-cryst. Solids 788 (2002) 299
6. Gopalakrishnan N., Baskar K., Kawanami H., and Sakata I. J. Crystal Growth 250 (2003) 29
7. Akiyama M., Kawarada Y., Ueda T., Nishi S., and Kaminishi K. J. Crystal Growth 77 (1986) 490
8. Yamaguchi M., Tachikawa M., Itoh Y., and Sugo M. Kondo. J. Appl. Phys. 68 (1990) 4518
9. EL-Masry N.A., Tarn J.C., and Karam N.H. J. Appl. Phys. 64 (1988) 3672
10. Fischer R., MORkoc H., Neumann D.A., Zabel H., Choi C., Otsuka N., Longerbone M., and Erickson L.P. J. Appl. Phys. 60 (1986) 1640
11. Soga T., and Hattori S. J. Crystal Growth 77 (1986) 498
12. Soga T., Imori T., Umeno M., and Hattori S. Jpn. J. Appl. Phys. 26 (1987) L536
13. Takagi Y., Yonezu H., Kawi T., Hayashida K., Samonji K., Ohshima N., and Pak K. J. Crystal Growth 150 (1995) 677
14. Samonji K., Yonezu H., Takagi Y., Iwaki K., Ohshima N., Shin J.K., and Pak K. Appl. Phys. Lett. 69 (1996) 100
15. Takano Y., Hisaka M., Fujii N., Suzuki K., Kuwabara K., and Fuke S. Appl. Phys. Lett. 73 (1998) 2917
16. Zytkiewicz Z.R., and Domagala J. Appl. Phys. Lett. 75 (1999) 2749
17. Chang Y.S., Naritsuka S., and Nishinaga T. J. Crystal Growth 174 (1997) 630
18. Kamins T.I., Mandurah M.M., and Saraswat K.C. J. Electrochem. Soc. 125 (1978) 927
19. Kamins T.I. J. Electrochem. Soc. 127 (1980) 686
20. Hao M.-S., Liang J.-W., Zheng L.-X., Deng L.-S., Xiao Z.-B., and Hu X.-W. Jpn. J. Appl. Phys 34 (1995) L900
21. Kim K.-S., Yang G.-M., Shim H.-W., Lim K.-Y., Suh E.-K., and Lee H.-J. J. Appl. Phys. 82 (1997) 5103
22. Uen W.-Y., Li Z.-Y., Lan S.-M., Yang T.-N., and Shin H.-Y. Semicond. Sci. Technol. 21 (2006) 852