Band discontinuity measurements of the wafer bonded InGaAsSi heterojunction

Applied Physics Letters

Volumn 90, Issue 22, 2007, Pages

  McKay, Kyle S ^a   Lu, Felix P ^a   Kim, Jungsang ^a   Yi, Changhyun ^a   Brown, April S ^a   Hawkins, Aaron R ^b  

^a Duke University   (United States)

^b Department of Electrical and Computer Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; DIFFUSION; ELECTRIC CURRENT MEASUREMENT; INTERFACES (MATERIALS); THERMIONIC EMISSION; VOLTAGE MEASUREMENT; WAFER BONDING;

BAND DISCONTINUITY MEASUREMENTS; CONDUCTION BAND DISCONTINUITIES; WAFER FUSION BONDING;

HETEROJUNCTIONS;

EID: 34249867128     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2745254     Document Type: Article

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