Fabrication of silicon on lattice-engineered substrate (SOLES) as a platform for monolithic integration of CMOS and optoelectronic devices

Materials Science and Engineering: B

Volumn 135, Issue 3, 2006, Pages 235-237

  Dohrman, Carl L ^a   Chilukuri, Kamesh ^a   Isaacson, David M ^a   Lee, Minjoo L ^a   Fitzgerald, Eugene A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Chemical vapor deposition; Epitaxy of thin films; Germanium; Heterostructures; Semiconductors; Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GERMANIUM; HETEROJUNCTIONS; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

EPITAXY OF THIN FILMS; EXFOLIATION; THIS LAYER TRANSFER; WAFER BONDING;

CMOS INTEGRATED CIRCUITS;

EID: 33750720033     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.08.012     Document Type: Article

References (5)

1. Kroemer H., Liu T.-Y., and Petroff P.M. Workbook of the Fifth International Molecular Beam Epitaxy Conference (1988), Sapporo, Japan p. 138
2. Fitzgerald E.A., Xie Y.-H., Green M.L., Brasen D., Kortan A.R., Michel J., Mii Y.-J., and Weir B.E. Appl. Phys. Lett. 59 (1991) 811
3. Groenert M.E., Leitz C.W., Pitera A.J., Yang V., Lee H., Ram R.J., and Fitzgerald E.A. J. Appl. Phys. 93 (2003) 362
4. Currie M.T., Samavedam S.B., Langdo T.A., Leitz C.W., and Fitzgerald E.A. Appl. Phys. Lett. 72 (1998) 1718
5. Pitera A.J., Taraschi G., Lee M.L., Leitz C.W., Cheng Z.-Y., and Fitzgerald E.A. J. Electrochem. Soc. 151 (2004) 443