Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches

IEEE Journal of Quantum Electronics

Volumn 40, Issue 6, 2004, Pages 800-804

  Ma, Kai ^a   Urata, Ryohei ^a   Miller, David A B ^a   Harris Jr , James S ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

GaAs on Si; Low substrate temperature; Low temperature grown GaAs (LT GaAs); Metal semiconductor metal (MSM) switch; Monolithic integration

Indexed keywords

CMOS INTEGRATED CIRCUITS; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SILICON WAFERS; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

ANTI-PHASE DOMAIN DENSITY; FULL WIDTH AT HAL MAXIMUM SWITCHING; LOW TEMPERATURE GROWTH; METAL-SEMICONDUCTOR METAL PHOTOCONDUCTIVE SWITCHES; MONOLITHIC INTEGRATION; TIME RESOLVED ELECTROOPTIC SAMPLING TECHNIQUE; ULTRAFAST PHOTOCONDUCTIVE SWITCHES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 3042641839     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.828234     Document Type: Article

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